Numerical Optimization of a CZTS Thin-Film Solar Cell for Enhanced Photovoltaic Performance Using SCAPS-1D
- Authors
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Wafaa F. Gebril
Department of Physics, Faculty of Science-Almarj, University of Benghazi, Almarj, LibyaAuthor
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- Keywords:
- CZTS; SCAPS-1D; thin-film solar cell; CdS; ZnO; ITO; photovoltaic performance.
- Abstract
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Earth-abundant and non-toxic copper zinc tin sulfide (Cu2ZnSnS4, CZTS) serves as a compelling absorber candidate for thin-film solar technology, characterized by a favorable direct optical bandgap near 1.5 eV alongside a strong absorption coefficient. This work presents a numerical simulation of an ITO ZnO CdS CZTS Mo heterojunction configuration carried out via the SCAPS-1D platform under ambient conditions (300 K) and standard AM1.5G solar spectrum (100 mW cm2). Key physical parameters, including the spatial dimensions of the CZTS absorber, ZnO window, and CdS buffer layers, alongside acceptor doping densities and working temperatures, were systematically varied to evaluate device characteristics. Findings demonstrate that increasing the CZTS absorber thickness enhances the photovoltaic response up to an optimum thickness of 2.4 μm, beyond which only a limited additional improvement is obtained. The ZnO thickness has a comparatively minor influence on the simulated performance over the investigated range; therefore, a thickness of 50 nm was selected as a practical value while maintaining near-maximum efficiency. The absorber acceptor concentration strongly affects the device characteristics, with an optimum practical value of NA=1×1018 cm-3 identified for the investigated structure. Following optimization of the selected device parameters, the proposed solar cell achieves a maximum power conversion efficiency of 24.19%, with an open-circuit voltage Voc of 1.057 V, a short-circuit current density Jsc of 26.18 mA cm-2, and a fill factor FF of 87.42%. These outcome metrics confirm that comprehensive physical and electrical calibration across the absorber, buffer, and window regions significantly boosts the simulated efficiency of thin-film CZTS heterojunction devices.
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- References
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- 2026-08-24
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- Vol. 7 No. 2 (2026)
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